Redistribution Layer Metallic Structure and Method

ABSTRACT

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

BACKGROUND

In semiconductor industry, integrated circuits (ICs) are formed on asemiconductor substrate and are saw to IC chips. Each IC chip is furtherattached (such as by bonding) to a circuit board, such as a printedcircuit board in electric products. In previous technologies, variousbonding pads of the chip are connected to the circuit board through wirebonding. In advanced technologies, a circuit chip is flipped anddirectly bonded to the circuit board for reduced cost. In thistechnology, a redistribution layer of conductive metal lines is formedon the chip to reroute bond connections from the edge to the center ofthe chip. The existing structure of the redistribution layer and thecorresponding method cause either metal filling issue, which furthercauses passivation defect. Therefore, the present disclosure provides aredistribution layer structure and a method making the same to addressthe above issues.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1A is a sectional view of a semiconductor device structure having aredistribution layer (RDL) constructed according to various aspects ofthe present disclosure in some embodiments.

FIG. 1B is a sectional view of a semiconductor device structureconstructed according to various aspects of the present disclosure insome other embodiments.

FIG. 2 is a flowchart of a method to fabricate an integrated circuit(IC) structure of FIG. 1 in accordance with some embodiments.

FIG. 3 is a flowchart of a method to make the RDL structure inaccordance with some embodiments.

FIG. 4 is a flowchart of a method to make a RDL metallic layer inaccordance with some embodiments.

FIGS. 5, 6, 7, 8, 9, and 10 illustrate sectional views of an integratedcircuit structure during various fabrication stages during the method ofFIG. 3, constructed in accordance with some embodiments.

FIGS. 11, 12, and 13 illustrate sectional views of an RDL metallic layerduring various fabrication stages during the method of FIG. 7,constructed in accordance with some embodiments.

FIG. 14 illustrates a sectional view of an integrated circuit structurehaving a RDL structure, constructed in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed. It is to beunderstood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

FIG. 1A is a sectional view of an integrated circuit (IC) structure (orsemiconductor structure, or a work piece) 100 constructed according tovarious aspects of the present disclosure in one embodiment. FIG. 1B isa sectional view of the semiconductor structure 100 with fin activeregions constructed according to other embodiments. FIG. 2 is aflowchart of a method 200 making the semiconductor structure 100 inaccordance with some embodiments. The semiconductor structure 100 andthe method 200 making the same are collectively described with referenceto FIGS. 1A, 1B, 2, and other figures. In some embodiments, thesemiconductor structure 100 includes flat active regions with various ICdevices, such as plain field-effect transistors (FETs), formed thereon,as illustrated in FIG. 1A. In some embodiments, the semiconductorstructure 100 includes fin active regions with various IC devices formedthereon, as illustrated in FIG. 1B.

The semiconductor structure 100 includes a substrate 102. The substrate102 includes a bulk silicon substrate. Alternatively, the substrate 102may include an elementary semiconductor, such as silicon or germanium ina crystalline structure; a compound semiconductor, such as silicongermanium, silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; or combinationsthereof. Possible substrates 102 also include a silicon-on-insulator(SOI) substrate. SOI substrates are fabricated using separation byimplantation of oxygen (SIMOX), wafer bonding, and/or other suitablemethods.

The substrate 102 also includes various isolation features, such asisolation features 104 formed on the substrate 102 and defining variousactive regions on the substrate 102, such as an active region 106. Theisolation feature 104 utilizes isolation technology, such as shallowtrench isolation (STI), to define and electrically isolate the variousactive regions. The isolation feature 104 includes silicon oxide,silicon nitride, silicon oxynitride, other suitable dielectricmaterials, or combinations thereof. The isolation feature 104 is formedby any suitable process. As one example, forming STI features includes alithography process to expose a portion of the substrate, etching atrench in the exposed portion of the substrate (for example, by using adry etching and/or wet etching), filling the trench (for example, byusing a chemical vapor deposition process) with one or more dielectricmaterials, and planarizing the substrate and removing excessive portionsof the dielectric material(s) by a polishing process, such as a chemicalmechanical polishing (CMP) process. In some examples, the filled trenchmay have a multi-layer structure, such as a thermal oxide liner layerand filling layer(s) of silicon nitride or silicon oxide.

The active region 106 is a region with semiconductor surface whereinvarious doped features are formed and configured to one or more device,such as a diode, a transistor, and/or other suitable devices. The activeregion may include a semiconductor material similar to that (such assilicon) of the bulk semiconductor material of the substrate 102 ordifferent semiconductor material, such as silicon germanium (SiGe),silicon carbide (SiC), or multiple semiconductor material layers (suchas alternative silicon and silicon germanium layers) formed on thesubstrate 102 by epitaxial growth, for performance enhancement, such asstrain effect to increase carrier mobility.

In some embodiments illustrated in FIG. 1B, the active region 106 isthree-dimensional, such as a fin active region extended above theisolation feature 104. The fin active region is extruded from thesubstrate 102 and has a three-dimensional profile for more effectivecoupling between the channel region (or simply referred to as channel)and the gate electrode of a FET. The fin active region 106 may be formedby selective etching to recess the isolation features 104, or selectiveepitaxial growth to grow active regions with a semiconductor same ordifferent from that of the substrate 102, or a combination thereof.

The semiconductor substrate 102 further includes various doped features,such as n-type doped wells, p-type doped wells, source and drain, otherdoped features, or a combination thereof configured to form variousdevices or components of the devices. The semiconductor structure 100includes various IC devices 110 formed on the semiconductor substrate102. The IC devices includes fin field-effect transistors (FinFETs),diodes, bipolar transistors, imaging sensors, resistors, capacitors,inductors, memory cells, or a combination thereof. In FIG. 1A (or FIG.1B), FETs are provided only for illustration.

The semiconductor structure 100 further includes an interconnectionstructure 120 formed on the semiconductor substrate 102. Theinterconnection structure 120 includes various conductive features tocouple various IC devices into an integrated circuit. Theinterconnection structure 120 further includes an interlayer dielectric(ILD) layer 122 to separate and isolate various conductive features. Forexamples, the interconnection structure 120 includes contacts 124; metallines 126; and vias 128. The metal lines 126 are distributed in multiplemetal layers. In FIG. 1A, four metal layers are illustrated. The topmetal lines are separately labeled with numerical 130. The contacts 124provide vertical electrical routing from the semiconductor substrate 102to the metal lines. The vias 128 provide vertical electrical routingbetween adjacent metal layers. Various conductive features are formed byone or more conductive material, such as metal, metal alloy, orsilicide. For examples, the metal lines 126 may include copper, aluminumcopper alloy, other suitable conductive material, or a combinationthereof. The vias 128 may include copper, aluminum copper alloy, othersuitable conductive material, or a combination thereof. The contacts 124may include tungsten, silicide, nickel, cobalt, copper, other suitableconductive material, or a combination thereof. In some examples, variousconductive features may further include a barrier layer, such astantalum and tantalum nitride, titanium and titanium nitride. In thepresent embodiment, the top metal lines 130 include copper.

The ILD layer 122 includes one or more dielectric material to provideisolation functions to various device components (such as gates) andvarious conductive features (such as metal lines, contacts and vias).The ILD layer 122 includes a dielectric material, such as silicon oxide,a low-k dielectric material, other suitable dielectric material, or acombination thereof. In some examples, the low-k dielectric materialincludes fluorinated silica glass (FSG), carbon doped silicon oxide,Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), polyimide, and/or other suitable dielectricmaterials with dielectric constant substantially less than that of thethermal silicon oxide. The formation of the ILD layer 122 includesdeposition and CMP, for examples. The deposition may include spin-oncoating, CVD, other suitable deposition technology or a combinationthereof. The ILD layer 122 may include multiple layers and iscollectively formed with various conductive features in a properprocedure, such as damascene process.

In some embodiments, the interconnection structure 120 or a portionthereof is formed by deposition and patterning. For examples, a metal(or metal alloy), such as aluminum copper is deposited by physical vapordeposition (PVD), then is patterned by lithography process and etching.Then an ILD layer is disposed on by deposition (and CMP). In someembodiments, the interconnect structure 120 uses a damascene process toform metal lines. In a damascene process, an ILD layer is deposited, maybe further planarized by CMP, and then is patterned by lithography andetching to form trenches. One or more conductive material is depositedto fill the trenches, and another CMP process is applied to remove theexcessive conductive material and planarize the top surface, therebyforming conductive features. The damascene process may be used to formmetal lines, vias, and contacts. A dual damascene process may be appliedto form one layer of metal lines and vias adjacent the metal lines. Inthis case, the ILD layer is deposited and patterned twice to formtrenches and via holes, respectively. Then the metal is deposited tofill both the trenches and via holes to form metal lines and vias.

The semiconductor structure 100 further includes a redistribution layer(RDL) structure 140 disposed on the interconnection structure 120 toredistribute bonding pads, such as from the edge to the center of an ICchip for flip chip bonding or other suitable packaging technology tointegrate an IC chip to a board (e.g., a printed circuit board).

The RDL structure 140 includes passivation and RDL metallic features 142embedded in the passivation with bonding pads 150 in the openings 152 ofthe passivation. In the present embodiment, the passivation includes afirst passivation layer 144 and a second passivation layer 146 disposedon the first passivation layer 144. The first passivation layer 144includes a redistribution via (RV) hole aligned to a top metal line 130so that the portion 148 of a RDL metallic feature 142 is formed in theRV hole and directly contact the top metal line 130. The portion 148 ofthe RDL metallic feature 142 is also referred to as RV pad 148. The RDLmetallic feature 142 vertically extends from the first passivation layer144 to the second passivation layer 146 and horizontally extends fromthe RV pad 148 to the bonding pad 150 for pad redistribution.

In the present embodiment, the first passivation layer 144 includes asilicon nitride (SiN) layer and an un-doped silica glass (USG) layer onthe SiN layer; and the second passivation layer 144 includes an USGlayer and a SiN layer disposed on the USG layer. The RDL metallicfeatures 142 include multiple layers. In the present embodiment, the RDLmetallic features 142 include a barrier layer, a diffusion layerdisposed on the barrier layer and an aluminum copper alloy layerdisposed on the diffusion layer. The barrier layer may further include atantalum film and a tantalum nitride film disposed on the tantalum film.The diffusion layer is a metal oxide. In the present embodiment, thediffusion layer includes tantalum, oxygen, aluminum, and nitrogen. Thediffusion layer has a thickness ranging between 5 angstrom and 30angstrom. The aluminum copper alloy layer is formed at high temperaturegreater than 300° C. The RDL structure 140, especially the RDL metallicfeatures 142 are further described in the following descriptions.

FIG. 2 is a flowchart of a method 200 making the semiconductor structure100 in accordance with some embodiments. Some fabrication details areprovided above and are not repeated here. The method 200 includes anoperation 202 to form isolation features 104 on the semiconductorsubstrate 102; an operation 204 to form various IC devices (such asFETs, diodes, passive devices, imaging sensors, memory cells, othersuitable IC devices or a combination thereof) on the semiconductorsubstrate 102; an operation 206 to form an interconnection structure 120(such as contacts 124, metal lines 126, vias 128 and top metal lines130) by a suitable method, such as damascene process; and an operation208 to form a RDL structure 140. The method 200 may include otheroperations before, during or after the above operations. The method toform the RDL structure 140 is further described in details below.

FIG. 3 is a flowchart of a method 208 to form the RDL structure 140 andFIG. 4 is a flowchart of a method 306 to form the RDL metallic features142 according to some embodiments. FIGS. 5 through 14 are sectionalviews of the semiconductor structure 100 at various fabrication stagesin accordance with some embodiments. The method 208 and thesemiconductor structure 100 are collectively described with reference toFIGS. 3 through 14.

Referring to block 302 of FIG. 3 and FIG. 5, the method 208 includes anoperation to deposit a first passivation layer 144 on theinterconnection structure 120. FIG. 5 (other figures as well) skips somefeatures (such as isolation features 104, IC devices, contacts 124,metal lines 126 and vias 128) on the substrate 102 and theinterconnection structure 120 for simplicity. The first passivationlayer 144 includes one or more dielectric material layers. In thepresent embodiment, the first passivation layer 144 includes a firstdielectric material layer 144A and a second dielectric material layer144B disposed on the first dielectric material layer 144A. Infurtherance of the embodiment, the first dielectric material layer 144Aincludes silicon nitride (SiN) and has a thickness ranging between 500angstrom and 1000 angstrom; and the second dielectric material layer144B includes un-doped silica glass (USG) and has a thickness rangingbetween 5000 angstrom and 10000 angstrom. The passivation layer 144 isdeposited by a suitable deposition technology, such as CVD, high densityplasma CVD (HDPCVD), other suitable technology or a combination thereof.The operation 302 may include multiple steps to deposit differentdielectric material layers with respective precursors.

Referring to block 304 of FIG. 3 and FIG. 6, the method 208 includes anoperation to pattern the first passivation layer 144 to form RV holes602, which are aligned with respective top metal lines 130 so that therespective top metal lines 130 are exposed within the RV holes. In someembodiments, a RV hole 602 has a dimension ranging between 5 micron and20 micron. The patterning process in the operation 304 includeslithography process and etching. In some examples, a patternedphotoresist layer is formed by lithography process that further includesspin-on coating, exposure, developing, and one or more baking steps. Anetching process is applied to the first passivation layer 144 throughopenings of the patterned photoresist (or resist) layer to form RV holesin the first passivation layer. The etching process may include dryetching, wet etching, or a combination thereof. The etching process mayinclude multiple etching steps with different etchants to etchrespective dielectric material layers. For example, the etching processmay include a first etching process using buffered hydrofluoric acid toetch the USG layer 144B and phosphoric acid to etch the SiN layer 144A.In some examples, the operation 304 may uses a patterned hard mask todefine the regions for RV holes. The formation of the patterned hardmask may include depositing a hard mask layer; forming a patternedresist layer by a lithography process; etching the hard mask through theopenings of the patterned resist layer; and removing the patternedresist layer by wet stripping or plasma ashing.

Referring to block 306 of FIG. 3 and FIG. 7, the method 208 includes anoperation to form a RDL metallic layer 142 on the first passivationlayer 144 and on the top metal lines 130 within the RV holes 602. TheRDL metallic layer 142 directly contacts the top metal lines 130 throughthe RV holes. The RDL layer 142 includes multiple films formed bymultiple steps. The structure and formation of the RDL layer 142 will befurther described in details later.

Referring to block 308 of FIG. 3 and FIG. 8, the method 208 proceeds toan operation by patterning the RDL layer 142 to form RDL metallicfeatures (still labeled with numerical 142). The patterning process inthe operation 308 includes lithography process and etching. Similarly, apatterned resist layer is formed by lithography process; and an etchingprocess is applied to the RDL metallic layer to form RDL metallicfeatures. The etching process may include dry etching, wet etching, or acombination thereof. The etching process may include multiple etchingsteps with different etchants to etch respective films in the RDLmetallic layer. In some examples, the operation 308 may uses a patternedhard mask to define the regions for the portions of the RDL metalliclayer to be removed.

After the completion of the operation 308, the RDL metallic features 142are formed on the first passivation layer 144. Each RDL metallic feature142 includes a portion 148 vertically extends to and directly contactthe respective top metal line 130, the portion 148 being also referredto as RV pad 148.

Referring to block 310 of FIG. 3 and FIG. 9, the method 208 includes anoperation to deposit a second passivation layer 146 on the firstpassivation layer 144 and the RDL metallic features 142. The secondpassivation layer 146 includes one or more dielectric material layers.In the present embodiment, the second passivation layer 146 includes afirst dielectric material layer 146A and a second dielectric materiallayer 146B disposed on the first dielectric material layer 146A. Infurtherance of the embodiment, the first dielectric material layer 146Aincludes USG and has a thickness ranging between 2000 angstrom and 4000angstrom; and the second dielectric material layer 146B includes SiN andhas a thickness ranging between 2000 angstrom and 6000 angstrom. Thesecond passivation layer 146 is deposited by a suitable depositiontechnology, such as HDPCVD, other suitable technology or a combinationthereof. The operation 310 may include multiple steps to depositdifferent dielectric material layer with respective precursors.

Referring to block 312 of FIG. 3 and FIG. 10, the method 208 includes anoperation to pattern the second passivation layer 146 to form openings152. A portion 150 of the RDL metallic feature 142 is exposed within thecorresponding opening 152. The portion 150 functions as a bonding pad.For example, solder ball may be further formed on the bonding pad 150and will be connected to the corresponding conductive feature in acircuit board during wafer scale chip bonding. In some embodiment, theopening 152 has a dimension ranging between 10 micron and 30 micron. ARDL metallic feature 142 vertically extends from the second passivationlayer 146 to the first passivation layer 144 to directly contact thecorresponding top metal line 130 within the RV hole and horizontallyextends from the RV pad 148 to the bonding pad 150 to redistribute thebonding locations, such as from the chip edge to the chip center.

The patterning process in the operation 312 includes lithography processand etching. In some examples, a patterned resist layer is formed bylithography process. An etching process is applied to the secondpassivation layer 146 through openings of the patterned resist layer toform openings 152 in the second passivation layer 146. The etchingprocess may include dry etching, wet etching, or a combination thereof.The etching process may include multiple etching steps with differentetchants to etch respective dielectric material layers. For example, theetching process may include a first etching process using bufferedhydrofluoric acid to etch the USG layer 146A and phosphoric acid to etchthe SiN layer 146B. In some examples, the operation 312 may uses apatterned hard mask to define the openings 152.

Now referring back to FIG. 3, the operation 306 to form the RDL layer142 is previously described and is now further described in details withreference to FIGS. 4 and 11-13. FIG. 4 is a flowchart of a method 306 toform the RDL metallic layer 142; and FIGS. 11 through 13 are sectionalviews of the RDL metallic layer at various fabrication stages inaccordance with some embodiments. For simplicity, FIGS. 11-13 onlyillustrate various conductive films of the RDL metallic layer 142.

Referring to block 402 of FIG. 4, the method 306 includes an operationto perform a degas process to semiconductor structure 100. The degasprocess is performed in an inert gas environment (such as argon) at ahigh temperature to dehydrate the semiconductor structure 100. Accordingto some examples, the degas process is performed at a temperatureranging between 200° C. and 400.0 with a degas duration ranging from 30sec to 300 sec. In the present embodiment, the degas process isimplemented in a PVD tool, such as a PVD cluster tool with plurality ofprocessing chambers.

Referring to block 404 of FIG. 4, the method 306 proceeds to anoperation to perform a remote-plasma-cleaning (RPC) process to thesemiconductor structure 100 to clean thereof, particularly the top metallines 130. The RPC process removes particles, residuals and othercontaminations from the top metal lines. The RPC process is performed ina gas environment in a plasma condition. In the present embodiment, theRPC process includes a gas of hydrogen and helium at the roomtemperature. According to some examples, hydrogen is between 3% and 10%(atomic percentage) and the helium is between 97% and 90% of the gas. Insome examples, the gas pressure ranges between 10 millitorr (mTorr) and30 mTorr. EF power to generate plasma ranges between 500 W and 1500 W.RPC treatment duration ranges between 30 sec and 300 sec. In the presentembodiment, the RPC process is implemented in the same PVD tool.

Referring to block 406 of FIG. 4 and FIG. 11, the method 306 includes anoperation to deposit a barrier layer 1102 on the first passivation layer144 and the top metal lines 130 within the RV holes. The barrier layer1102 may include tantalum (Ta), tantalum nitride (TaN), titanium (Ti),titanium nitride (TiN), other suitable material, or a combinationthereof. In the present embodiment, the barrier layer 1102 includes a Tafilm 1102A and a TaN film 1102B. In some examples, the Ta film 1102A hasa thickness ranges between 5 angstrom and 30 angstrom; and the TaN film1102B has a thickness ranges between 400 angstrom and 800 angstrom. Inthe present embodiment, the deposition of the barrier layer 1102 is alsoimplemented in the same PVD tool. For example, in one depositionchamber, tantalum is deposited using a tantalum target and then thentantalum nitride is deposited with additional nitrogen gas in the samechamber or a different deposition chamber. In the present embodiment,the barrier layer 1102 has a polycrystalline structure.

Referring to block 408 of FIG. 4, the method 306 proceeds to anoperation to perform a cooling process to the semiconductor structure100. For example, the cooling process is implemented in an inert gas(such as argon) environment for a suitable duration, such as a durationbetween 20 sec and 60 sec. The cooling process is also carried on in thesame PVD tool.

Referring to block 410 of FIG. 4 and FIG. 12, the method 306 includes anoperation to perform an oxygen treatment to the barrier layer 1102,thereby forming a diffusion layer 1202. The diffusion layer 1202 is ametallic oxide layer that includes oxygen and a metal. In the presentembodiment, the diffusion layer 120 includes oxygen and tantalum. Inother embodiments, the diffusion layer 1202 further includes nitrogen.The diffusion layer 1202 may have a thickness ranging between 5 angstromand 30 angstrom. The diffusion layer 1202 has a graded composition witha maximum oxygen concentration at the top surface of the diffusion layer1202. In some examples, the maximum oxygen concentration is greater than35% (atomic percentage) but less than 45%. In the present embodiment,the diffusion layer 1202 has an amorphous structure while the barrierlayer 1102 has a polycrystalline structure.

During the oxygen treatment, oxygen diffuses into the barrier layer1102. The oxygen treatment is also implemented in the same PVD tool. Theoxygen treatment is in an oxygen environment at room temperature withoxygen flow rate ranging between 1 sccm and 20 sccm. In someembodiments, plasma may be applied to the oxygen gas with a low plasmapower, such as in a range between 500 W and 1500 W, so that the oxygenconcentration is controlled at a low level to maintain a suitablecontact resistance.

Referring to block 412 of FIG. 4, the method 306 includes an operationto perform a second degas process to semiconductor structure 100 afterthe formation of the barrier layer 1102 and the diffusion layer 1202.The second degas process is similar to the first degas process in theoperation 402. For example, the second degas process is performed in anargon environment at a high temperature to dehydrate the semiconductorstructure 100. According to some examples, the degas process isperformed at a temperature ranging between 200° C. and 400.0 with adegas duration ranging from 30 sec to 300 sec. In the presentembodiment, the degas process is implemented in the same PVD tool.

Referring to block 414 of FIG. 4, the method 306 proceeds to anoperation to perform a second RPC process to the semiconductor structure100 to clean thereof, particularly to clean the barrier layer 1102 andthe diffusion layer 1202. The second RPC process removes particles,residuals and other contaminations, such as from those metallic materiallayers. The second RPC process is similar to the first RPC process inthe operation 404. For example, the second RPC process is performed in agas environment in a plasma condition. In the present embodiment, thesecond RPC process includes a gas of hydrogen and helium at the roomtemperature. According to some examples, hydrogen is between 3% and 10%and the helium is between 97% and 90% of the gas. In some examples, thegas pressure ranges between 10 mTorr and 30 mTorr. EF power to generateplasma ranges between 500 W and 1500 W. The second RPC treatmentduration ranges between 30 sec and 300 sec. In the present embodiment,the RPC process is implemented in the same PVD tool.

Referring to block 416 of FIG. 4 and FIG. 13, the method 306 includes anoperation to deposit a metallic layer 1302 on the diffusion layer 1202.The metallic layer 1302 may include aluminum, copper, tungsten, othersuitable metal or metal alloy, or a combination thereof. In the presentembodiment, the metallic layer 1302 includes an aluminum copper (AlCu)alloy. In furtherance of the embodiment, the AlCu layer 1302 includesabout 99.5% aluminum and about 0.5% copper. The AlCu layer 1302 isdeposited by sputtering in the PVD tool at a high deposition temperaturegreater than 300° C., such as a temperature ranging between 300° C. and500° C. In some examples, the deposition temperature ranges between 350°C. and 450° C. In the present embodiment, thus formed AlCu layer 1302has a polycrystalline structure. Particularly, the grain size of theAlCu layer 1302 substantially distributed in a range between 5 micronand 20 micron. In some embodiments, the AlCu layer 1302 has a grain sizedistribution with more than 50% polycrystalline grains of grain sizesgreater than 1 micron. In some embodiments, the AlCu layer 1302 has athickness ranges between 6000 angstrom and 12000 angstrom.

In the existing method, an AlCu layer is deposited at a cold condition,such as a deposition temperature less than 300° C. Thus deposited AlCulayer cannot properly fill in gaps (such as RV holes), leaving atooth-like profile. This further leads to incomplete or improper fillingof the second passivation layer 146, causing various performance andreliability issues. By implementing a hot deposition in the disclosedmethod, the AlCu layer 1302 has improved gap filling on one side but maycause metal extrusion on another side. Especially, tantalum in thebarrier layer 1102 diffusion to the AlCu layer 1302 and induces TaNlattice vacancy, which provides further chances for copper from the topmetal line 130 to form copper extrusion. Furthermore, aluminum in theAlCu layer 1302 easily forms aluminum extrusion by thermal stress. Byforming the diffusion layer 1202 that interposes between and separatesthe AlCu layer 1302 and the barrier layer 1202, various metal extrusionsare effectively eliminated or substantially reduced. The disclosedmethod with hot deposition of the AlCu layer 1302 and oxygen treatmentto form the diffusion layer 1202, both the filling issues and the metalextrusion issue are improved.

During the operation 416 to deposit the AlCu layer 1302, due to the hightemperature deposition, aluminum from the AlCu layer 1302 may diffuse tothe diffusion layer 1202. In this case, the diffusion layer 1202 alsoincludes aluminum. In some embodiments, the diffusion layer 1202includes tantalum, oxygen, aluminum and nitrogen.

Additionally, all above operations in the method 306 are implemented invarious chambers of a cluster PVD. When the workpiece 100 is sent intothe PVD tool through a loadlock and will be sent out after thecompletion of the above operations. Thus, the manufacturing cost isreduced and contamination among the operations is avoided. For example,the PVD cluster tool includes one or more degas chambers, one or morepre-clean chambers, one or more pass-through chambers, and a pluralityof deposition chambers. In furtherance of the example, a degasoperations is implemented in a degas chamber; a RPC operation isimplemented in a pre-clean chamber; a cooling operation may beimplemented in a pass-through chamber; various deposition operations(Ta, TaN and AlCu depositions) are implemented in various depositionchambers; and the oxygen treatment is implemented in a degas chamber, apre-clean chamber, or a deposition chamber.

Thus formed semiconductor structure 100 by the method 200 is furtherillustrated in FIG. 14 in a sectional view, constructed in accordancewith some embodiments. Particularly, the RDL structure 140 is formed bythe method 208. More specifically, the RDL metallic layer 142 is formedby the method 306. Both the method 208 and the method 306 are portionsof the method 200 but being detailed with multiple sub-operations.

The method 200 may additionally include other operations before, duringor after the operations described above. The semiconductor structure mayfurther include other features. For example, testing structures may beincluded to aid in the verification testing of the 3D packaging or 3DICdevices. The testing structures may include, for example, test padsformed in a redistribution layer or on a substrate that allows thetesting of the 3D packaging or 3DIC, the use of probes and/or probecards, and the like. The verification testing may be performed onintermediate structures as well as the final structure. Additionally,the structures and methods disclosed herein may be used in conjunctionwith testing methodologies that incorporate intermediate verification ofknown good dies to increase the yield and decrease costs.

The present disclosure provides a semiconductor structure 100 and amethod 200 making the same in various embodiments. The semiconductorstructure includes a RDL structure having RDL metallic features formedusing a high temperature deposition and an oxygen treatment to form adiffusion layer containing a metal and oxygen. By implementing thedisclosed method in various embodiments, some of advantages describedbelow may present. However, it is understood that different embodimentsdisclosed herein offer different advantages and that no particularadvantage is necessarily required in all embodiments. As one example,the AlCu layer 1302 is formed in a PVD tool by sputtering at a hightemperature; the gas filling is substantially improved. A diffusionlayer 1202 is formed between the barrier layer 1102 and the AlCu layer1302, which prevents the metal extrusion.

Thus, the present disclosure provides an integrated circuit (IC)structure in accordance with some embodiments. The IC structure includesa semiconductor substrate having IC devices formed thereon; aninterconnection structure formed on the semiconductor substrate, whereinthe interconnection structure includes contacts, vias and metal linescoupled to the IC devices; and a redistribution layer (RDL) metallicfeature formed on the interconnection structure and directly landing ona top metal line of the interconnection structure. The RDL metallicfeature further includes a barrier layer disposed on the top metal line;a diffusion layer disposed on the barrier layer, wherein the diffusionlayer includes metal and oxygen; and a metallic layer disposed on thediffusion layer.

The present disclosure also provides an IC structure in accordance withsome other embodiments. The IC structure includes a semiconductorsubstrate having IC devices formed thereon; an interconnection structureformed on the semiconductor substrate, wherein the interconnectionstructure includes a plurality of conductive features coupled to the ICdevices; and a redistribution layer (RDL) metallic feature formed on theinterconnection structure and directly landing on one conductive featureof the plurality of conductive features. The RDL metallic featurefurther includes a barrier layer disposed on the conductive feature; adiffusion layer disposed on the barrier layer, wherein the diffusionlayer is a metallic oxide in an amorphous structure; and a metalliclayer disposed on the diffusion layer. The RDL metallic feature iselectrically connected to the conductive feature through the barrierlayer and the diffusion layer.

The present disclosure provides a method of fabricating an integratedcircuit (IC) structure in accordance with some embodiments. The methodincludes forming IC devices on a semiconductor substrate; forming aninterconnection structure on the semiconductor substrate, wherein theinterconnection structure includes a plurality of conductive featurescoupled with the IC devices; forming a first passivation layer on theinterconnection structure, wherein the first passivation layer includesa first opening that exposes a top conductive feature of the pluralityof the conductive features; depositing a barrier layer on the firstpassivation layer and on the top conductive feature within the firstopening; performing an oxygen treatment to the barrier layer to form adiffusion layer; depositing a metallic layer on the diffusion layer;patterning the metallic layer, the diffusion layer and the barrier layerto form a redistribution layer (RDL) metallic feature; and forming asecond passivation layer on the RDL metallic feature and the firstpassivation layer. The RDL metallic feature extends from the topconductive feature to a second opening of the second passivation layeras a bonding pad.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit (IC) structure, comprising: a semiconductorsubstrate; an interconnection structure formed on the semiconductorsubstrate and including a top metal feature within a first region; apassivation layer disposed on the interconnection structure and havingan opening within a second region being distanced away from the firstregion; and a redistribution layer (RDL) metallic feature formed in thepassivation layer, wherein the RDL metallic feature is landing on thetop metal feature, and horizontally extends from the top metal featurein the first region to the opening in the second region, and wherein theRDL metallic feature further includes a barrier layer disposed on thetop metal feature, wherein the barrier layer includes a metal andnitrogen; a diffusion layer disposed on the barrier layer, wherein thediffusion layer includes the metal and oxygen; and a metallic layerdisposed on the diffusion layer.
 2. The IC structure of claim 1, whereinthe RDL metallic feature is electrically connected to [a] the top metalfeature of the interconnection structure through the barrier layer andthe diffusion layer; the diffusion layer is different from the barrierlayer in composition; and each of the barrier layer, the diffusion layerand the metallic layer extends from the first region to the secondregion.
 3. The IC structure of claim 2, wherein the passivation layerhas a topmost surface above a topmost surface of the RDL metallicfeature; and the passivation layer has a bottom surface being coplanarwith a bottom surface of the RDL metallic feature.
 4. The IC structureof claim 3, wherein the diffusion layer has a graded oxygenconcentration from a top surface to a bottom surface of the diffusionlayer with a maximum oxygen concentration greater than 35% at the topsurface.
 5. The IC structure of claim 2, wherein the barrier layerincludes a tantalum film and a tantalum nitride film on the tantalumfilm; and the diffusion layer includes tantalum, oxygen and nitrogen. 6.The IC structure of claim 5, wherein the metallic layer includesaluminum in a polycrystalline structure; and the diffusion layer furtherincludes aluminum and is a metallic oxide layer in an amorphousstructure.
 7. The IC structure of claim 1, wherein the metallic layerincludes aluminum in a polycrystalline structure with grain sizessubstantially ranging between 5 micron and 20 micron.
 8. The ICstructure of claim 1, wherein the metallic layer includes aluminum in apolycrystalline structure with more than 50% polycrystalline grains ofgrain sizes greater than 1 micron.
 9. The IC structure of claim 1,wherein the passivation layer further includes a first passivation layerand a second passivation layer formed on the interconnection structure;the first passivation layer includes a first silicon nitride layer and afirst un-doped silica glass layer disposed on the first silicon nitridelayer; the second passivation layer includes a second un-doped silicaglass layer disposed on the first un-doped silica glass layer and asecond silicon nitride layer disposed on the second un-doped silicaglass layer; and the RDL metallic feature includes a first portionvertically extending from the first passivation layer to the secondpassivation layer within the first region, and a second portion in thesecond passivation layer and horizontally extending from the firstregion to the second region.
 10. An integrated circuit (IC) structure,comprising: a semiconductor substrate having IC devices formed thereon;an interconnection structure formed on the semiconductor substrate andcoupled to the IC devices, wherein the interconnection structureincludes a top metal feature within a first region; a passivation layerdisposed on the interconnection structure and having an opening within asecond region being distanced away from the first region; and aredistribution layer (RDL) metallic feature formed in the passivationlayer and directly landing on the top metal feature of the plurality ofconductive features, wherein the RDL metallic feature further includes abarrier layer disposed on the conductive feature; a diffusion layerdisposed on the barrier layer, wherein the diffusion layer is a metallicoxide in an amorphous structure and is different from the barrier layerin composition; and a metallic layer disposed on the diffusion layer,wherein the RDL metallic feature is electrically connected to the topmetal feature through the barrier layer and the diffusion layer, whereineach of the barrier layer, the diffusion layer and the metallic layer ofthe RDL metallic feature horizontally extends from the first region tothe second region.
 11. The IC structure of claim 10, wherein the barrierlayer, the diffusion layer and the metallic layer include first endsaligned at a first location in the first region and second ends alignedat a second location in the second region.
 12. The IC structure of claim10, wherein the diffusion layer has a graded oxygen concentration from atop surface to a bottom surface of the diffusion layer with a maximumoxygen concentration greater than 35% at the top surface.
 13. The ICstructure of claim 10, wherein the barrier layer includes a tantalumfilm and a tantalum nitride film disposed on the tantalum film; themetallic layer includes aluminum; and the diffusion layer includestantalum, aluminum, oxygen and nitrogen.
 14. The IC structure of claim10, wherein the metallic layer includes aluminum in polycrystallinestructure with more than 50% of polycrystalline grains having grainsizes greater than 1 micron.
 15. The IC structure of claim 10, whereinthe passivation layer further includes a first passivation layer and asecond passivation layer formed on the interconnection structure,wherein the first passivation layer includes a first silicon nitridelayer and a first un-doped silica glass layer disposed on the firstsilicon nitride layer; the second passivation layer includes a secondun-doped silica glass layer disposed on the first un-doped silica glasslayer and a second silicon nitride layer disposed on the second un-dopedsilica glass layer; and the RDL metallic feature includes a firstportion vertically extending from the first passivation layer to thesecond passivation layer within the first region, and a second portionin the second passivation layer and horizontally extending from thefirst region to the second region, wherein the second portion ispartially exposed within [an] the opening of the passivation layer as abonding pad. 16-20. (canceled)
 21. An integrated circuit (IC) structure,comprising: a semiconductor substrate having IC devices formed thereon;an interconnection structure formed on the semiconductor substrate,wherein the interconnection structure includes a top metal featurewithin a first region coupled to the IC devices; a passivation layerdisposed on the interconnection structure and having an opening within asecond region being distanced away from the first region; and aredistribution layer (RDL) metallic feature embedded in the passivationlayer, landing on the top metal feature, and horizontally extending fromthe top metal feature in the first region to the opening in the secondregion, wherein the RDL metallic feature further includes a barrierlayer disposed on the conductive feature, the barrier layer includestantalum and nitrogen; a diffusion layer disposed on the barrier layerand being different from the barrier layer in composition, wherein thediffusion layer includes nitrogen, oxygen and tantalum; and a metalliclayer disposed on the diffusion layer, wherein the RDL metallic featureis electrically connected to the top metal feature through the barrierlayer and the diffusion layer, wherein the passivation layer includes afirst silicon nitride film and an un-doped silica film on the firstsilicon nitride film, and a second silicon nitride film on the un-dopedsilica film, and wherein the RDL metallic feature includes a topmostsurface below a bottom surface of the second silicon nitride film. 22.The IC structure of claim 21, wherein the diffusion layer has a gradedoxygen concentration from a top surface to a bottom surface of thediffusion layer with a maximum oxygen concentration greater than 35% atthe top surface.
 23. The IC structure of claim 21, wherein the barrierlayer includes a tantalum film and a tantalum nitride film disposed onthe tantalum film; the diffusion layer includes tantalum, aluminum,oxygen and nitrogen; the metallic layer includes aluminum.
 24. The ICstructure of claim 21, wherein the metallic layer includes aluminum inpolycrystalline structure with more than 50% of polycrystalline grainshaving grain sizes greater than 1 micron.
 25. The IC structure of claim21, wherein the barrier layer, the diffusion layer and the metalliclayer include first ends aligned at a first location in the first regionand second ends aligned at a second location in the second region.